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| SPD09P06PL G SIPMOS =Power-Transistor Feature P-Channel * P-channel Enhancement mode * Enhancement mode * Logic Level prueb Logic Level * 175C operating temperature 175C operating temperature * Avalanche rated Avalanche rated * dv/dt rated dv/dt rated * Pb-free lead plating; RoHS compliant Product Summary VDS RDS(on) ID -60 0.25 -9.7 PG-TO252-3 V Drain pin 2 Type SPD09P06PL G Package PG-TO252-3 Lead free Yes Gate pin1 Source pin 3 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value -9.7 -6.8 Unit A Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg -38.8 70 4.2 6 20 42 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID =-9.7 A , VDD =-25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =-9.7A, VDS =-48, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 2.5 Page 1 2008-07-29 A SPD09P06PL G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. max. 3.6 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =-250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -60 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-250A Zero gate voltage drain current VDS =-60V, VGS=0V, Tj =25C VDS =-60V, VGS=0V, Tj =150C A -0.1 -10 -10 0.3 0.2 -1 -100 -100 0.4 0.25 nA Gate-source leakage current VGS =-20V, VDS =0V VGS =-4.5V, ID =-5.4A Drain-source on-state resistance VGS =-10V, ID =-6.8A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.5 Page 2 2008-07-29 Drain-source on-state resistance SPD09P06PL G Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics ID =-5.4 Symbol Conditions min. Values typ. 3.5 360 103 40 11 168 49 89 max. 450 130 50 17 252 74 134 Unit Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS =-25V, f=1MHz VDD =-30V, VGS =-4.5V, ID =-5.4, RG =6 VDD =-30V, VGS =-4.5V, ID =-5.4A, RG =6 Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =-9.7A VR =-30V, IF=lS, diF /dt=100A/s Qgs Qgd Qg VDD =-48V, ID =-9.7A VDD =-48V, ID =-9.7A, VGS =0 to -10V V(plateau) VDD =-48V, ID =-9.7A IS ISM TC=25C Rev 2.5 Page 3 Transconductance gfs VDS 2*ID *RDS(on)max , 1.8 - S pF ns - 1.3 5.1 14 -4.1 2 7.5 21 - nC V - -1.1 52 64 -9.7 -38.8 -1.4 76 96 A V ns nC 2008-07-29 SPD09P06PL G 1 Power dissipation Ptot = f (TC ) 50 SPD09P06PL 2 Drain current ID = f (TC ) parameter: VGS 10 V -11 SPD09P06PL W 40 35 A -9 -8 Ptot 30 25 ID -7 -6 -5 20 -4 15 10 5 0 0 -3 -2 -1 20 40 60 80 100 120 140 160 C 190 0 0 20 40 60 80 100 120 140 160 C 190 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C -10 2 SPD09P06PL tp = 11.0s 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD09P06PL K/W A 10 0 -10 1 ID 100 s Z thJC = V DS /I D 10 -1 on ) R DS ( 1 ms 10 -2 -10 0 10 ms DC 10 -3 single pulse -10 -1 -1 -10 -10 0 -10 1 V -10 2 10 -4 -7 10 10 -6 VDS Rev 2.5 Page 4 TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2008-07-29 SPD09P06PL G 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s -24 SPD09P06PL 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 0.8 SPD09P06PL A -20 -18 -16 Ptot = 42W VGS [V] a b c d e f g h i kj i -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -7.0 -8.0 c d ID -14 -12 -10 g h e f g h i RDS(on) f j k -8 -6 -4 -2 0 0 -2 -4 -6 -8 c a b e d V -12 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 25 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 4 A 3 g fs ID 15 10 5 0.5 0 0 1 2 3 4 5 6 8 V VGS Rev 2.5 Page 5 0.6 0.5 0.4 0.3 0.2 0.1 VGS [V] = jk g h i j -5.0 -5.5 -6.0 -7.0 k -8.0 c d e f -3.0 -3.5 -4.0 -4.5 0 0 -2 -4 -6 -8 -10 -12 -14 -16 A -20 ID S 2.5 2 1.5 1 0 0 1 2 3 4 5 6 7 8 V ID 10 2008-07-29 SPD09P06PL G 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -6.8 A, VGS = -10 V 0.75 SPD09P06PL 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -250 A 2.4 V RDS(on) 0.55 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 -60 -20 20 60 100 140 C V GS(th) 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 3 pF C Coss 10 2 Crss IF 10 1 0 0.6 98% typ 200 98 % 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 typ. 2% C Tj 180 Tj 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s -10 2 SPD09P06PL Ciss A -10 1 -10 0 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) -5 -10 -15 -20 V -30 -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VDS VSD Page 6 Rev 2.5 2008-07-29 SPD09P06PL G 13 Typ. avalanche energy EAS = f (Tj ) 80 14 Typ. gate charge VGS = f (QGate ) parameter: ID = -9.7 A pulsed -16 SPD09P06PL mJ 60 E AS 50 VGS 40 30 20 10 0 25 45 65 85 105 125 145 C 185 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -72 SPD09P06PL V V (BR)DSS -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 140 C 200 Tj Rev 2.5 Page 7 par.: ID = -9.7 A , VDD = -25 V, RGS = 25 V -12 -10 0,2 VDS max 0,8 VDS max -8 -6 -4 -2 0 0 4 8 12 16 20 nC 28 QGate 2008-07-29 SPD09P06PL G Package outline: PG-TO252-3 Rev 2.5 page 8 2008-07-29 SPD09P06PL G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.5 Page 8 2008-07-29 |
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